Charged Defects as an Origin of the Memory Effect in Incommensurate Phase of TlInS2 Ferroelectric--Semiconductors

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概要

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• The effects of annealing within the incommensurate phase and doping with the lanthanum impurity on the dielectric function $\varepsilon$ of the TlInS2 single crystals have been investigated. It is shown that illumination and application of external electric field transform the $\varepsilon (T)$ dependences for both the annealed and doped samples in the same manner. The inference is made that the correlation between observed effects is conditioned by the internal electric fields induced either by activation (polarization) of native defects during the annealing procedure or after the doping the crystals with active La centers.

• 2011-05-25

著者

• Babayev Sardar

  Institute of Physics, Azerbaijan National Academy of Sciences, Javid ave. 33, Baku AZ-1143, Azerbaijan

• Fedotov Aleksandr

  Belarusian State University, 220050, Independence av. 4, Minsk, Belorus

• Seyidov MirHasan

  Department of Physics, Gebze Institute of Technology, Gebze 41400, Kocaeli, Turkey

• Suleymanov Rauf

  Department of Physics, Gebze Institute of Technology, Gebze 41400, Kocaeli, Turkey

• Mammadov Tofig

  Institute of Physics, Azerbaijan National Academy of Sciences, Javid ave. 33, Baku AZ-1143, Azerbaijan

• Sharifov Galib

  Institute of Physics, Azerbaijan National Academy of Sciences, Javid ave. 33, Baku AZ-1143, Azerbaijan

関連論文

• Charged Defects as an Origin of the Memory Effect in Incommensurate Phase of TlInS2 Ferroelectric--Semiconductors
• The Role of Electronic Subsystem in the Negative Thermal Expansion of Ferroelectric--Semiconductor TlGaSe2

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