The Role of Electronic Subsystem in the Negative Thermal Expansion of Ferroelectric--Semiconductor TlGaSe2

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概要

• 論文の詳細を見る

• Effect of illumination and external electric field on thermal expansion of TlGaSe2 crystals has been investigated. Strong transformation of negative linear expansion coefficient has been observed. It is supposed that two main mechanisms are responsible for observed effects: formation of electret state and reverse piezoelectric effect. The electronic nature of negative linear expansion of TlGaSe2 crystals has been proved for the first time.

• 2011-05-25

著者

• Yakar Emin

  Department of Physics, Gebze Institute of Technology, Gebze 41400, Kocaeli, Turkey

• Mammadov Tofig

  Institute of Physics, Azerbaijan National Academy of Sciences, Javid ave. 33, Baku AZ-1143, Azerbaijan

• Seyidov MirHasan

  Institute of Physics, National Academy of Sciences, 33 H. Javid av., Baku AZ 1143, Azerbaijan

• Abdullayev Nadir

  Institute of Physics, National Academy of Sciences, 33 H. Javid av., Baku AZ 1143, Azerbaijan

• Suleymanov Rauf

  Institute of Physics, National Academy of Sciences, 33 H. Javid av., Baku AZ 1143, Azerbaijan

関連論文

• Metal--Insulator Transition Induced by Temperature in Bi2Te3-xClx Layered Compound
• Charged Defects as an Origin of the Memory Effect in Incommensurate Phase of TlInS2 Ferroelectric--Semiconductors
• The Role of Electronic Subsystem in the Negative Thermal Expansion of Ferroelectric--Semiconductor TlGaSe2

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