Disappearance of Barrier Metal during Cu Chemical Mechanical Planarization Processing and Its Mechanism

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概要

• 論文の詳細を見る

• The bald disappearance of barrier metal had been observed on the wafer after Cu chemical mechanical planarization (CMP) processing. It was speculated that this phenomenon occurs because the excessively oxidized Ta by electrochemical reaction with Cu ion was removed more easily than the normal Ta oxide around it. The inhibition of the electrochemical reaction is necessary to solve this phenomenon.

• The Japan Society of Applied Physicsの論文
• 2011-05-25

著者

• Yasui Akihito

  Fujimi Inc., Kakamigahara, Gifu 509-0109, Japan

• Asano Hiroshi

  Fujimi Inc., Kakamigahara, Gifu 509-0109, Japan

• Hirano Tatsuhiko

  Fujimi Inc., Kakamigahara, Gifu 509-0109, Japan

• Tamai Kazusei

  Fujimi Inc., Kakamigahara, Gifu 509-0109, Japan

• Morinaga Hitoshi

  Fujimi Inc., Kakamigahara, Gifu 509-0109, Japan

関連論文

• Disappearance of Barrier Metal during Cu Chemical Mechanical Planarization Processing and Its Mechanism
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