Instabilities in n-GaAs Including Chaos and Period 3 Simulated by Numerical Computation

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概要

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• In studying current instabilities and chaos in semiconductor n-GaAs under weak photoexcitation, we pay special attention to influences from the carrier diffusion, arising from the space charges trapped near the injecting contacts. We extend the well-accepted two-impurity-level model by including the diffusion current $\delta J$ formed by such space charges near the negative contact. Without this $\delta J$, one sees the prototype of period-doubling bifurcation (Feigenbaum scenario) but with unbound and exploding phenomena as the control parameter beyond 10.58 V/cm. Adding $\delta J$ in, we remove the unreasonable explosion and have the bifurcation routes to chaos of a current filament interrupted by a stable period 3 near $E_{0}^{[3]}$. Our simulations accurately reproduce the location of $E_{0}^{[3]}$ and the Feigenbaum number. From our results, we see that $\delta J$ plays the role of providing strong friction and preventing the further increase of the conduction electron concentration from exploding.

• 2009-09-15

著者

• Tzeng Shwu-yun

  Department Of Electro-optical Engineering National Taipei University Of Technology

• Tzeng Yiharn

  Institute of Physics, Academia Sinica, Taipei, Taiwan 115, R.O.C.

• Liu Kelvin

  General Education Center, National Taipei University of Technology, Taipei, Taiwan 106, R.O.C.

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