Magnetic Counterpart of Persistent Photoconductivity in Narrow-Gap Semiconductors
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概要
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At low temperatures, some ionic, covalent and mixed bonding compounds, as well as semiconducting heterostructures and quantum wells exhibit persistent photoconductivity. This term is used to describe the striking phenomenon in which the conductivity of these compounds and/or structures is observed to be greatly enhanced by visible or infrared illumination and the low resistance state is maintained for a long time after switching off the illumination. To describe this effect in variously doped ionic-covalent semiconductors, models of repulsive barriers for both electron emission and capture were introduced based primarily on the assumption of dopants displacement in the host's crystal lattice. Here we report on the magnetic counterpart of this phenomenon, which however does not exactly meet the expectations based on transport measurements. It was found that the magnetic response of AIVBVI narrow-gap semiconductors doped with CIII impurities possesses features of both relaxation phenomena and light-induced phase transition. Exposure of PbTe:Ga, PbTe:In and Pb0.75Sn0.25Te:In single crystals to white-light illumination at low temperatures resulted initially in an increase of the diamagnetic response and then in the appearance of a sharp paramagnetic peak upon heating.
- Physical Society of Japanの論文
- 2001-08-15
著者
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Kageyama Hiroshi
Institute For Solid State Physics University Of Tokyo
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WARCHULSKA Jolanta
International Laboratory of High Magnetic Fields and Low Temperature
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Voloshok Tatyana
Low Temperature Physics Department Moscow State University
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Kageyama Hiroshi
Institute for Solid State Physics, University of Tokyo, Kashiwa, Chiba 277-8581
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Warchulska Jolanta
International Laboratory of High Magnetic Fields and Low Temperature, Wroclaw 53-421, Poland
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Kageyama Hiroshi
Institute for Integrated Cell-Material Sciences, Kyoto University, Kyoto 606-8501, Japan
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