Ultra High Density Scanning Electrical Probe Phase-Change Memory for Archival Storage

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概要

• 論文の詳細を見る

• The potential for using probe-based phase-change memories for the future archival storage at densities of around 1 Tbit/in.2 is investigated using a recording medium comprising a Si/TiN/DLC/GeSbTe/diamond-like carbon (DLC) stack together with a conductive PtSi tip for writing and reading. Both experimental and computational simulation results are presented. The simulations include a physically-realistic threshold switching model, as well as the effects of thermal boundary resistance and electrical contact resistance. The simulated bit size and shape correspond closely to that written experimentally.

• 2011-09-25

著者

• Pozidis Haralampos

  Ibm Research Zurich Research Laboratory

• Wright C.

  University of Exeter, Exeter EX4 4QF, U.K.

• Aziz Mustafa

  University of Exeter, Exeter EX4 4QF, U.K.

• Pauza Andrew

  Plarion Ltd., Melbourn Science Park, Melbourn, Herts SG8 6HB, U.K.

• Wang Lei

  Nanchang Hangkong University, Nanchang 330063, P. R. China

• Shah Purav

  Middlesex University, The Burroughs, London NW4 4BT, U.K.

• Sebastian Abu

  IBM Research---Zurich, 8803 Ruschlikon, Switzerland

• Pozidis Haralampos

  IBM Research---Zurich, 8803 Ruschlikon, Switzerland

関連論文

• MMT-07 NANO-SERVOMECHANICS OF A MEMS DEVICE FOR AFM-BASED STORAGE TECHNOLOGY
• Ultra High Density Scanning Electrical Probe Phase-Change Memory for Archival Storage

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