The Effect of Carrier Injection Stress on Boron-Doped Amorphous Silicon Suboxide Layers Investigated by X-ray Photoelectron Spectroscopy

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概要

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• In amorphous silicon solar cells, reducing degradation is one of the key issues in improving cell performance. The degradation of the p-layer can play an important role since it is directly related to the open circuit voltage ($V_{\text{oc}}$) and fill factor (FF) in the cells. In this study, we investigated the changes in boron-doped p-type silicon suboxide (SiO_x) layers after carrier injection stress. The boron doping level was varied by controlling B₂H₆ gas flow rate. When these layers were degraded, the dark conductivity decay decreased from 53% to less than 5%, and the increase in activation energy decreased from 11 to 0.5% depending on the B₂H₆ gas flow rate increase. Our improvements are explained in conjunction with the three- and four-fold coordinated boron atoms by the shift of the B 1s X-ray photoelectron spectrum. In this paper we present how to improve the stability of hydrogenated amorphous silicon (a-Si:H) thin-film solar cells.

• 2011-09-25

著者

• Lee Youn-Jung

  School of Information and Communication Engineering, Sungkyunkwan University, Suwon, Gyeonggi 440-746, Republic of Korea

• Yi Junsin

  Nano-Mechanical System Research Center, Korea Institute of Machinery and Materials (KIMM), Daejeon 305-343, Republic of Korea

• Kim Youngkuk

  School of Information and Communication Engineering, Sungkyunkwan University, 300 Chungchun-dong, Jangan-gu, Suwon, Kyunggi-do 440-746, Republic of Korea

• Lee Sunhwa

  School of Information and Communication Engineering, Sungkyunkwan University, Suwon, Gyeonggi 440-746, Republic of Korea

• Park Seungman

  School of Information and Communication Engineering, Sungkyunkwan University, Suwon, Gyeonggi 440-746, Republic of Korea

• Park Jinjoo

  School of Information and Communication Engineering, Sungkyunkwan University, Suwon, Gyeonggi 440-746, Republic of Korea

• Yoon Kichan

  School of Information and Communication Engineering, Sungkyunkwan University, Suwon, Gyeonggi 440-746, Republic of Korea

• Shin Chonghoon

  Department of Energy Science, Sungkyunkwan University, Suwon, Gyeonggi 440-746, Republic of Korea

• Baek Seungsin

  School of Information and Communication Engineering, Sungkyunkwan University, Suwon, Gyeonggi 440-746, Republic of Korea

• Kim Joondong

  Nano-Mechanical System Research Center, Korea Institute of Machinery and Materials (KIMM), Daejeon 305-343, Republic of Korea

• Kim Youngkuk

  School of Information and Communication Engineering, Sungkyunkwan University, Suwon, Gyeonggi 440-746, Republic of Korea

関連論文

• The Effect of Carrier Injection Stress on Boron-Doped Amorphous Silicon Suboxide Layers Investigated by X-ray Photoelectron Spectroscopy
• SiNx Double Layer Antireflection Coating by Plasma-Enhanced Chemical Vapor Deposition for Single Crystalline Silicon Solar Cells
• Hydrogenated Amorphous Silicon Layer Formation by Inductively Coupled Plasma Chemical Vapor Deposition and Its Application for Surface Passivation of p-Type Crystalline Silicon
• Effectiveness of Iodine Termination for Ultrahigh Efficiency Solar Cells as a Means of Chemical Surface Passivation

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