The Effect of Carrier Injection Stress on Boron-Doped Amorphous Silicon Suboxide Layers Investigated by X-ray Photoelectron Spectroscopy
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概要
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In amorphous silicon solar cells, reducing degradation is one of the key issues in improving cell performance. The degradation of the p-layer can play an important role since it is directly related to the open circuit voltage ($V_{\text{oc}}$) and fill factor (FF) in the cells. In this study, we investigated the changes in boron-doped p-type silicon suboxide (SiO<sub>x</sub>) layers after carrier injection stress. The boron doping level was varied by controlling B<sub>2</sub>H<sub>6</sub> gas flow rate. When these layers were degraded, the dark conductivity decay decreased from 53% to less than 5%, and the increase in activation energy decreased from 11 to 0.5% depending on the B<sub>2</sub>H<sub>6</sub> gas flow rate increase. Our improvements are explained in conjunction with the three- and four-fold coordinated boron atoms by the shift of the B 1s X-ray photoelectron spectrum. In this paper we present how to improve the stability of hydrogenated amorphous silicon (a-Si:H) thin-film solar cells.
- 2011-09-25
著者
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Lee Youn-Jung
School of Information and Communication Engineering, Sungkyunkwan University, Suwon, Gyeonggi 440-746, Republic of Korea
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Yi Junsin
Nano-Mechanical System Research Center, Korea Institute of Machinery and Materials (KIMM), Daejeon 305-343, Republic of Korea
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Kim Youngkuk
School of Information and Communication Engineering, Sungkyunkwan University, 300 Chungchun-dong, Jangan-gu, Suwon, Kyunggi-do 440-746, Republic of Korea
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Lee Sunhwa
School of Information and Communication Engineering, Sungkyunkwan University, Suwon, Gyeonggi 440-746, Republic of Korea
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Park Seungman
School of Information and Communication Engineering, Sungkyunkwan University, Suwon, Gyeonggi 440-746, Republic of Korea
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Park Jinjoo
School of Information and Communication Engineering, Sungkyunkwan University, Suwon, Gyeonggi 440-746, Republic of Korea
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Yoon Kichan
School of Information and Communication Engineering, Sungkyunkwan University, Suwon, Gyeonggi 440-746, Republic of Korea
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Shin Chonghoon
Department of Energy Science, Sungkyunkwan University, Suwon, Gyeonggi 440-746, Republic of Korea
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Baek Seungsin
School of Information and Communication Engineering, Sungkyunkwan University, Suwon, Gyeonggi 440-746, Republic of Korea
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Kim Joondong
Nano-Mechanical System Research Center, Korea Institute of Machinery and Materials (KIMM), Daejeon 305-343, Republic of Korea
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Kim Youngkuk
School of Information and Communication Engineering, Sungkyunkwan University, Suwon, Gyeonggi 440-746, Republic of Korea
関連論文
- The Effect of Carrier Injection Stress on Boron-Doped Amorphous Silicon Suboxide Layers Investigated by X-ray Photoelectron Spectroscopy
- SiNx Double Layer Antireflection Coating by Plasma-Enhanced Chemical Vapor Deposition for Single Crystalline Silicon Solar Cells
- Hydrogenated Amorphous Silicon Layer Formation by Inductively Coupled Plasma Chemical Vapor Deposition and Its Application for Surface Passivation of p-Type Crystalline Silicon
- Effectiveness of Iodine Termination for Ultrahigh Efficiency Solar Cells as a Means of Chemical Surface Passivation