Reactive Sputter Deposition of SiO_xN_y Films under Ar--CO₂--N₂ Atmosphere

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概要

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• Amorphous SiO_xN_y films were deposited by pulsed-dc reactive magnetron sputtering using a boron-doped Si target under Ar--CO₂--N₂ atmosphere. The refractive index ($n$) varied continuously between 1.54 and 2.0 with the CO₂ flow ratio [$\text{CO$_{2}$}/(\text{CO$_{2}$}+ \text{N$_{2}$})$], maintaining a high transparency in the visible range. Furthermore, the variations in the cathode voltage and deposition rate revealed that the target surface was progressively oxidized with increasing CO₂ flow ratio. Thus, the films deposited with the CO₂ gas exhibited a gradual $n$ shift and a high deposition rate as compared with that deposited with the O₂ gas. On the other hand, these films had the typical composition and structure of SiO_xN_y films prepared by reactive sputtering. These results indicate that the CO₂ gas is an effective reactive gas for controlling the $n$ of the SiO_xN_y films.

• 2011-08-25

著者

• Takamatsu Atsushi

  Glass Research Center, Central Glass Co., Ltd., Matsusaka, Mie 515-0001, Japan

• Ashida Toru

  Glass Research Center, Central Glass Co., Ltd., 1510 Ohkuchi-cho, Matsusaka, Mie 515-0001, Japan

• Ashida Toru

  Glass Research Center, Central Glass Co., Ltd., Matsusaka, Mie 515-0001, Japan

• Omoto Hideo

  Glass Business Planning & Development Department, Central Glass Co., Ltd., Chiyoda, Tokyo 101-0054, Japan

• Tomioka Takao

  Glass Research Center, Central Glass Co., Ltd., Matsusaka, Mie 515-0001, Japan

関連論文

• Reactive Sputter Deposition of SiOxNy Films under Ar--CO2--N2 Atmosphere
• Internal Stress and Microstructure of Zinc Oxide Films Sputter-Deposited with Carbon Dioxide Gas

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