Enhancement of Seebeck Coefficient in Bi<sub>0.5</sub>Sb<sub>1.5</sub>Te<sub>3</sub> with High-Density Tellurium Nanoinclusions
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概要
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Bi<sub>0.5</sub>Sb<sub>1.5</sub>Te<sub>3</sub> films with homogeneously dispersed ${\sim}15$ nm Te nanoparticles were prepared by the alternate deposition of Bi<sub>0.5</sub>Sb<sub>1.5</sub>Te<sub>3</sub> layers and Te nanoparticles. As the amount of Te nanoinclusions increased to 15 vol %, the Seebeck coefficient increased from 169 to 248 μV/K. The authors concluded that the high-density Te nanoinclusions result in a carrier energy filtering effect in Bi<sub>0.5</sub>Sb<sub>1.5</sub>Te<sub>3</sub>. Consequently, the thermoelectric power factor was enhanced by 30% despite a reduction in electrical conductivity. The improvement of the power factor implies the enhancement of the thermoelectric figure of merit $\mathit{ZT}$, providing the possibility of further $\mathit{ZT}$ improvement by embedding Te nanoinclusions in Bi<sub>0.5</sub>Sb<sub>1.5</sub>Te<sub>3</sub> bulk materials.
- 2011-09-25
著者
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Kim Hyun-sik
Advanced Materials Research Center Samsung Advanced Institute Of Technology Samsung Electronics
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Lee Kyu
Advanced Materials Research Center Samsung Advanced Institute Of Technology Samsung Electronics
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Kim Sang
Advanced Materials Research Center Samsung Advanced Institute Of Technology Samsung Electronics
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Lee Sang
Advanced Technology Team 2, Semiconductor R&D center, Samsung Electronics Co., Ltd., San #24, Nonseo-dong, Giheung-gu, Yongin, Gyunggi 446-711, Korea
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Ahn Kyunghan
Advanced Materials Research Center, Samsung Advanced Institute of Technology, Samsung Electronics, Yongin, Gyeonggi 446-712, Republic of Korea
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Yeon Dong-Hee
Advanced Materials Research Center, Samsung Advanced Institute of Technology, Samsung Electronics, Yongin, Gyeonggi 446-712, Republic of Korea
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Hwang Sungwoo
Advanced Materials Research Center, Samsung Advanced Institute of Technology, Samsung Electronics, Yongin, Gyeonggi 446-712, Republic of Korea
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Kim Sang
Advanced Materials Research Center, Samsung Advanced Institute of Technology, Samsung Electronics, Yongin, Gyeonggi 446-712, Republic of Korea
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Kim Hyun-Sik
Advanced Materials Research Center, Samsung Advanced Institute of Technology, Samsung Electronics, Yongin, Gyeonggi 446-712, Republic of Korea
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Lee Sang
Advanced Technology Team 2, Semiconductor R&D center, Samsung Electronics Co., Ltd., San #24, Nonseo-dong, Giheung-gu, Yongin, Gyunggi 446-711, Korea
関連論文
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- Enhancement of Seebeck Coefficient in Bi0.5Sb1.5Te3 with High-Density Tellurium Nanoinclusions