Effects of Surface and Crystalline Defects on Reverse Characteristics of 4H-SiC Junction Barrier Schottky Diodes
スポンサーリンク
概要
- 論文の詳細を見る
To clarify the relationship between the dispersed reverse characteristics of 4H-SiC junction barrier Schottky (JBS) diodes and defects, we investigated the sensitivity of the reverse characteristics to surface and crystalline defects in 4H-SiC epitaxial layers. Strong correlations were obtained between the reverse characteristics of 4H-SiC JBS diodes and surface defects. Micropipes or particles reduced blocking voltage and carrot defects increased leakage current. Furthermore, the leakage current of 4H-SiC JBS diodes depends on the etch pit density of threading dislocations (TDs). Etch pits formed from TDs increased leakage current by about $10^{-9}$ A in samples without surface defects. In addition, hexagonal etch pits formed from unusual crystalline defects were observed; they also increased leakage current.
- 2011-04-25
著者
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Fujiwara Hirokazu
TOYOTA MOTOR CORPORATION, Toyota, Aichi 470-0309, Japan
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Watanabe Yukihiko
Power Electronics Research Division, Toyota Central R&D Laboratories Inc., Nagakute, Aichi 480-1192, Japan
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Endo Takeshi
Research Laboratories, DENSO CORPORATION, Nisshin, Aichi 470-0111, Japan
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Konishi Masaki
TOYOTA MOTOR CORPORATION, Toyota, Aichi 470-0309, Japan
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Katsuno Takashi
Power Electronics Research Division, Toyota Central R&D Laboratories Inc., Nagakute, Aichi 480-1192, Japan
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Yamamoto Takeo
Research Laboratories, DENSO CORPORATION, Nisshin, Aichi 470-0111, Japan
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Katsuno Takashi
Power Electronics Research Division, Toyota Central R&D Laboratories Inc., Nagakute, Aichi 480-1192, Japan
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