Degradation Mechanism for Continuous-Wave Green Laser-Crystallized Polycrystalline Silicon n-Channel Thin-Film Transistors under Low Vertical-Field Hot-Carrier Stress with Different Laser Annealing Powers

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概要

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• For a thin-film transistor (TFT) in a display, the hot-carrier (HC) effect still plays an important role in causing the degradation of source/drain (S/D) current and reflects the problem of reliability. In this study, the proposed TFT devices were treated by continuous-wave green laser annealing on their Si-channels and also activated by the thermal-furnace method. Furthermore, using the shifts of capacitance--voltage ($C$--$V$) curves and observing the curve variation before and after stress, the targeted number of interface states and bulk traps in a channel can be realized. Indirectly, the degradation level of the tested device can be quantified when the stressed drain voltage is indicated in the horizontal direction, the gate voltage is slightly larger than the threshold voltage and is labeled in the vertical direction, and both are applied. The critical mechanism in degradation involves the location and number of interface states and grain boundary traps. These traps are mainly attributed to the interface states between SiO2 and channel polycrystalline silicon, the grain boundary traps, and the grain traps.

• 2011-04-25

著者

• Yang Hsin-chia

  Department Of Electrical Engineering National Taiwan University

• Liu Chuan-Hsi

  Department of Mechatronic Technology, National Taiwan Normal University, No. 162, Sec. 1, He-Ping E. Rd., Taipei 106, Taiwan

• Liu Chuan-Hsi

  Department of Mechatronic Technology, National Taiwan Normal University, Taipei 106, Taiwan

• Chen Shuang-Yuan

  Department of Electronic Engineering, Ming Hsin University of Science and Technology, Hsinchu 304, Taiwan

• Wang Mu-Chun

  Graduate Institute of Mechatronic Engineering, National Taipei University of Technology, Taipei 106, Taiwan

• Hsu Hong-Wen

  Graduate Institute of Mechatronic Engineering, National Taipei University of Technology, Taipei 106, Taiwan

• Hsieh Zhen-Ying

  Graduate Institute of Mechatronic Engineering, National Taipei University of Technology, Taipei 106, Taiwan

• Chang Shih-Ying

  Department of Electronic Engineering, Ming Hsin University of Science and Technology, Hsinchu 304, Taiwan

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