Efficient Nonvolatile Rewritable Memories Based on Three-Dimensionally Confined Au Quantum Dots Embedded in Ultrathin Polyimide Layers
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概要
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The electrical properties of a nonvolatile organic bistable device (OBD) utilizing Au quantum dots (QDs) sandwiched between two thin insulating polyimide layers were investigated. Current--voltage ($I$--$V$) measurements on the device at room temperature showed a current bistability due to the existence of the Au QDs. The maximum ON/OFF ratio of the current bistability in the OBD was $1 \times 10^{8}$, the largest value ever reported for a stable OBD. The device has excellent endurance and retention ability in ambient conditions. The electrical properties and operating mechanisms for the device are analyzed on the basis of the $I$--$V$ results.
- 2011-03-25
著者
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Gong Qihuang
State Key Laboratory For Mesoscopic Physics And Department Of Physics Peking University
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Qu Bo
State Key Laboratory For Mesoscopic Physics And Department Of Physics Peking University
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Chen Zhijian
State Key Laboratory For Mesoscopic Physics And Department Of Physics Peking University
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Wu Chaoxing
Institute of Optoelectronic Display, Fuzhou University, Fuzhou 350002, People's Republic of China
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Li Fushan
Institute of Optoelectronic Display, Fuzhou University, Fuzhou 350002, P. R. China
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Guo Tailiang
Institute of Optoelectronic Display, Fuzhou University, Fuzhou 350002, P. R. China
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Qu Bo
State Key Laboratory for Mesoscopic Physics, Peking University, Beijing 100871, People's Republic of China
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Chen Zhijian
State Key Laboratory for Mesoscopic Physics, Peking University, Beijing 100871, People's Republic of China
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Wu Chaoxing
Institute of Optoelectronic Display, Fuzhou University, Fuzhou 350002, P. R. China
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Gong Qihuang
State Key Laboratory for Mesoscopic Physics, Peking University, Beijing 100871, People's Republic of China
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