Nonvolatile Memory Effects of ZnO Nanoparticles Embedded in an Amorphous Carbon Layer

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概要

• 論文の詳細を見る

• Nonvolatile memory devices utilizing ZnO nanoparticles (NPs) embedded in an amorphous carbon (a-C) dielectric layer were investigated by capacitance–voltage ($C$–$V$) measurements. $C$–$V$ curves for the Al/ZnO NPs embedded in an amorphous carbon layer/SiO2/p-Si capacitor at 298 K showed a clockwise hysteresis with flat band voltage shift due to charge trapping in the ZnO NPs. Capacitance–time measurements showed that the devices exhibited excellent memory retention ability under ambient conditions. Operating mechanism for the memory devices was proposed based on the $C$–$V$ results.

• 2010-07-25

著者

• Li Fushan

  Institute of Optoelectronic Display, Fuzhou University, Fuzhou 350002, P. R. China

• Guo Tailiang

  Institute of Optoelectronic Display, Fuzhou University, Fuzhou 350002, P. R. China

• Tay Bengkang

  School of Electrical and Electronic Engineering, Nanyang Technological University, Singapore 639798

• Kim Taewhan

  National Research Laboratory for Nano Quantum Electronics, Division of Electronics and Computer Engineering, Hanyang University, Seoul 133-791, Republic of Korea

• Shakerzadeh Maziar

  School of Electrical and Electronic Engineering, Nanyang Technological University, Singapore 639798

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