Electric Field Induced Carrier Sweep-Out in Tandem InGaN Multi-Quantum-Well Self-Pulsating Laser Diodes

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概要

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• Mechanisms of carrier sweep-out in tandem InGaN multiple-quantum-well self-pulsating laser diodes were investigated. Laser diodes showed self-pulsating characteristics without significant change in the light output--current ($I$--$L$) characteristics when an electric field high enough was established in the saturable absorber by the applied reverse bias. Improvements in the design of the band-energy profile allowed a substantial reduction in the bias required for self-pulsating operation. These results indicate that carrier lifetime can be controlled by the electric field in the saturable absorber and that band-energy profile engineering is effective for the reduction of carrier lifetime.

• 2011-02-25

著者

• Vaccaro Pablo

  Advanced Technology Research Laboratories Sharp Corporation

• Ito Shigetoshi

  Advanced Technology Research Laboratories Sharp Corporation

• Kawaguchi Yoshinobu

  Advanced Technology Research Laboratories Sharp Corporation

• Tani Yoshihiko

  Electronic Components and Devices Group, Sharp Corporation, Mihara, Hiroshima 729-0474, Japan

• Kawanishi Hidenori

  Advanced Technology Research Laboratories, Sharp Corporation, Tenri, Nara 632-8567, Japan

• Vaccaro Pablo

  Advanced Technology Research Laboratories, Sharp Corporation, Tenri, Nara 632-8567, Japan

• Kawaguchi Yoshinobu

  Advanced Technology Research Laboratories, Sharp Corporation, Tenri, Nara 632-8567, Japan

• Ito Shigetoshi

  Advanced Technology Research Laboratories, Sharp Corporation, Tenri, Nara 632-8567, Japan

関連論文

• Blue Laser Diodes Fabricated on m-Plane GaN Substrates
• Electric Field Induced Carrier Sweep-Out in Tandem InGaN Multi-Quantum-Well Self-Pulsating Laser Diodes
• Blue Laser Diodes Fabricated on m-Plane GaN Substrates

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