Development of ZnO Based Charged Particle Monitor for Processing Facility
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概要
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In the present paper, we describe the development of an $\alpha$-ray imaging detector based on a ZnO single crystalline scintillator and a position-sensitive photomultiplier tube (PSPMT). The ZnO crystal was grown by the hydrothermal synthesis method with 2-in.-$\phi$ in diameter. The ZnO specimen was polished out to be 0.5 mm in thickness. After optically coupling with PSPMT, the crystal was irradiated with 241Am $\alpha$-ray for evaluation of both spatial resolution and pulse height spectrum. Using the charge center of the gravity method, two-dimensional $\alpha$-ray images were successfully obtained. The efficiency of the energy window in terms of imaging quality was also examined.
- 2011-01-25
著者
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Sekiwa Hideyuki
Mitsubishi Gas Chemical Co., Inc., 6-1-1 Niijuku, Katsushika, Tokyo 125-0051, Japan
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Sekiwa Hideyuki
Mitsubishi Gas Chemical Co., Ltd., Katsushika, Tokyo 125-0051, Japan
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Yanagida Takayuki
IMRAM, Tohoku University, 2-1-1 Katahira, Aoba, Sendai 980-8577, Japan
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Yanagida Takayuki
IMRAM, Tohoku University, Sendai, 980-8577, Japan
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Tokutake Taichi
Mitsubishi Gas Chemical Co., Ltd., Katsushika, Tokyo 125-0051, Japan
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Kawaguchi Noriaki
IMRAM, Tohoku University, Sendai, 980-8577, Japan
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Fujimoto Yutaka
IMRAM, Tohoku University, Sendai, 980-8577, Japan
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Yokota Yuui
IMRAM, Tohoku University, Sendai, 980-8577, Japan
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Miyamoto Miyuki
Mitsubishi Gas Chemical Co., Ltd., Katsushika, Tokyo 125-0051, Japan
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Kobayashi Jun
Mitsubishi Gas Chemical Co., Ltd., Katsushika, Tokyo 125-0051, Japan
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Chani Valery
IMRAM, Tohoku University, Sendai, 980-8577, Japan
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Yoshikawa Akira
IMRAM, Tohoku University, Sendai, 980-8577, Japan
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Yokota Yuui
IMRAM, Tohoku University, 2-1-1 Katahira, Aoba, Sendai 980-8577, Japan
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Chani Valery
IMRAM, Tohoku University, 2-1-1 Katahira, Aoba, Sendai 980-8577, Japan
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Fujimoto Yutaka
IMRAM, Tohoku University, 2-1-1 Katahira, Aoba, Sendai 980-8577, Japan
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Yoshikawa Akira
IMRAM, Tohoku University, 2-1-1 Katahira, Aoba, Sendai 980-8577, Japan
関連論文
- Scintillation Characteristic of In,Ga-Doped ZnO Thin Films with Different Dopant Concentrations
- Development of ZnO Based Charged Particle Monitor for Processing Facility