Scintillation Characteristic of In,Ga-Doped ZnO Thin Films with Different Dopant Concentrations

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概要

• 論文の詳細を見る

• The present study describes the first detailed evaluation of the rise and the decay time of scintillation phenomenon in In3+- and Ga3+-doped ZnO thin films with different dopant concentrations. In3+-(25, 55, and 141 ppm) and Ga3+-(33, 67, 333, and 1374 ppm) doped ZnO films were grown by the Liquid Phase Epitaxy (LPE) method. The characterization was performed using the pulse X-ray equipped streak camera system. Both the rise and the decay times were shortened considerably with increasing content of In3+ and Ga3+ in the films. However, the scintillation light yield under 241Am $\alpha$-ray excitation reduced when concentration of In3+ and Ga3+ in the ZnO films was high.

• 2011-01-25

著者

• Sekiwa Hideyuki

  Mitsubishi Gas Chemical Co., Inc., 6-1-1 Niijuku, Katsushika, Tokyo 125-0051, Japan

• Yanagida Takayuki

  IMRAM, Tohoku University, 2-1-1 Katahira, Aoba, Sendai 980-8577, Japan

• Fujimoto Yutaka

  IMRAM, Tohoku University, Sendai, 980-8577, Japan

• Chani Valery

  IMRAM, Tohoku University, Sendai, 980-8577, Japan

• Yoshikawa Akira

  IMRAM, Tohoku University, Sendai, 980-8577, Japan

• Yokota Yuui

  IMRAM, Tohoku University, 2-1-1 Katahira, Aoba, Sendai 980-8577, Japan

• Chani Valery

  IMRAM, Tohoku University, 2-1-1 Katahira, Aoba, Sendai 980-8577, Japan

• Fujimoto Yutaka

  IMRAM, Tohoku University, 2-1-1 Katahira, Aoba, Sendai 980-8577, Japan

• Yoshikawa Akira

  IMRAM, Tohoku University, 2-1-1 Katahira, Aoba, Sendai 980-8577, Japan

関連論文

• Scintillation Characteristic of In,Ga-Doped ZnO Thin Films with Different Dopant Concentrations
• Development of ZnO Based Charged Particle Monitor for Processing Facility

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