Conduction Mechanism and Low Frequency Noise Analysis in Al/Pr0.7Ca0.3MnO3 for Bipolar Resistive Switching

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概要

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• The low-frequency noise (LFN) Characteristics of bipolar switching devices consisting of Pt (top)/Al/Pr0.7Ca0.3MnO3 (PCMO)/Pt (bottom) were investigated. The noise spectral density in a low frequency range showed a classical $1/f$ dependence in both high-resistance state (HRS) and low-resistance state (LRS). The random telegraph noise (RTN) were observed in both HRS and LRS which is due to the AlOx layer acting as traps at the interface between Al and PCMO or traps in PCMO bulk layer. The voltage dependence of the normalized low-frequency spectral density of current fluctuations ($S_{\text{i}}/I^{2}$) presents that the noise properties can be useful indicators to explain the switching mechanism of Al/PCMO device but new noise models should be suggested for the clear approach to analysis of the conduction characteristics in the devices.

• 2011-01-25

著者

• Lee Jong-Ho

  ISRC and School of Electrical Engineering, Seoul National University, Seoul 151-742, Korea

• Lee Jung-Kyu

  ISRC and School of Electrical Engineering, Seoul National University, Seoul 151-742, Korea

• Park Young-June

  ISRC and School of Electrical Engineering, Seoul National University, Seoul 151-742, Korea

• Park Byung-Gook

  ISRC and School of Electrical Engineering, Seoul National University, Seoul 151-742, Korea

• Hwang Hyun-Sang

  Department of Materials Science and Engineering, Gwangju Institute of Science and Technology, Gwangju 500-712, Korea

• Lee Myoung-Sun

  ISRC and School of Electrical Engineering, Seoul National University, Seoul 151-742, Korea

• Shin Hyung-Cheol

  ISRC and School of Electrical Engineering, Seoul National University, Seoul 151-742, Korea

関連論文

• Analytic Oxide Capacitance Model of Double- and Surrounding-Gate Metal–Oxide–Semiconductor Field-Effect Transistors in Linear Region by Considering Inversion-Layer Capacitance
• Conduction Mechanism and Low Frequency Noise Analysis in Al/Pr0.7Ca0.3MnO3 for Bipolar Resistive Switching

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