Band Structure Dependence of Electron Mobility in Modulation-Doped Lattice-Matched InAlAs/InGaAs/InAlAs Heterostructures

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概要

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• Variable-magnetic-field Hall measurements were performed on modulation-doped In0.52Al0.48As/In0.53Ga0.47As/In0.52Al0.48As double heterostructures to investigate the influence of channel layer thickness on the two dimensional electron gas mobility. Quantitative mobility spectrum analysis revealed that the first and second subband mobilities increased with the channel thickness. This enhancement is attributed to the decreased subband effective mass, subband carrier density, and alloy disorder scattering potential.

• 2010-08-25

著者

• Ahn Il-Ho

  Department of Information and Communications, Gwangju Institute of Science and Technology (GIST), 1 Oryong-dong, Buk-gu, Gwangju 500-712, Korea

• Joung Hodoug

  Department of Information and Communications, Gwangju Institute of Science and Technology (GIST), 1 Oryong-dong, Buk-gu, Gwangju 500-712, Korea

関連論文

• Band Structure Dependence of Electron Mobility in Modulation-Doped Lattice-Matched InAlAs/InGaAs/InAlAs Heterostructures
• Separating the Contribution of Mobility among Different Quantum Well Subbands

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