Separating the Contribution of Mobility among Different Quantum Well Subbands

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概要

• 論文の詳細を見る

• Variable magnetic field Hall measurements were carried out to investigate carrier transport properties in a modulation-doped In0.53Ga0.47As/In0.52Al0.48As heterostructure over a broad temperature range from 10 to 300 K. Quantitative mobility-spectrum analysis (QMSA) and multicarrier fitting (MCF) analysis were then performed to separately extract information pertaining to the concentration and mobility associated with the first two quantum-well subbands. We thus present an analysis in which the scattering processes are relatively dominated by alloy disorder (optical phonon) for the first (second) subband to best fit the measured roll-over mobility characteristics in the high temperature region (${>}100$ K).

• 2010-01-25

著者

• Ahn Il-Ho

  Department of Information and Communications, Gwangju Institute of Science and Technology (GIST), 1 Oryong-dong, Buk-gu, Gwangju 500-712, Korea

• Song G.

  Department of Information and Communications, Gwangju Institute of Science and Technology (GIST), 1 Oryong-dong, Buk-gu, Gwangju 500-712, Korea

• Jho Young-Dahl

  Department of Information and Communications, Gwangju Institute of Science and Technology (GIST), 1 Oryong-dong, Buk-gu, Gwangju 500-712, Korea

関連論文

• Band Structure Dependence of Electron Mobility in Modulation-Doped Lattice-Matched InAlAs/InGaAs/InAlAs Heterostructures
• Separating the Contribution of Mobility among Different Quantum Well Subbands

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