Scanning Tunneling Microscopy Study of In situ Hydrogenation of Si(110) Surface

概要

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The in situ hydrogenation of the Si(110) surface has been studied by scanning tunneling microscopy. It has been found that a small amount of atomic hydrogen (H) generates missing protrusion defects in the reconstructed "$16\times 2$" areas. In the disordered areas, a small amount of H results in the rearrangement of pentagon pairs into a local "$4\times 5$" structure after annealing. The saturation coverage and higher temperatures result in a new type of zigzag-like surface structure. The structures formed on Si(110) by in situ hydrogenation are significantly different from those on hydrogenated surfaces obtained by chemical methods, where $1\times 1$ reconstruction is dominant.
Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
2010-08-25