Step and Flash Imprint of Fluorinated Silicon-Containing Resist Materials for Three-Dimensional Nanofabrication

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概要

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• Advanced fabrication of multiple-level three-dimensional nanostructures by step and flash nanoimprint lithography was studied. This study has been shown to be applicable to future nanofabrication endeavors in the industrial production of electronic devices and optical materials. Step and flash nanoimprint technologies using the newly fluorinated silicon-containing resist materials to prevent resist pattern collapse, contamination problem of the quartz template, and defect problems were demonstrated. High-quality nanoimprint patterning of 65 nm dense lines and other multiple-level three-dimensional nanostructures was achieved using the proposed material design and under ultraviolet nanoimprint conditions. The developed fluorinated silicon-containing resist material as a hard mask layer with a nonsilicon spin-on carbon material was found to be useful in producing high-aspect-ratio patterned structures by step and flash nanoimprint lithography.

• 2010-07-25

著者

• Takei Satoshi

  Toyama Prefectural University

• Takei Satoshi

  Toyama Prefectural University, Imizu, Toyama 939-0398, Japan

関連論文

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• Step and Flash Imprint of Fluorinated Silicon-Containing Resist Materials for Three-Dimensional Nanofabrication
• Electron Beam Lithography Using Highly Sensitive Negative Type of Plant-Based Resist Material Derived from Biomass on Hardmask Layer

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