Novel Damascene Gate Metal–Oxide–Semiconductor Field-Effect Transistors Fabricated by In situ Arsenic- and Boron-Doped Epitaxy
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概要
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A new concept planar metal–oxide–semiconductor field-effect transistor (MOSFET) which was fabricated by in situ doped selective Si epitaxy, has been proposed. Owing to the ultra-shallow junction, the short-channel effects were improved, and the drive current was increased by the gate overlapped structure as well. The characteristics of this new concept MOSFET were improved compared with those of a conventional MOSFET because of improvements in short-channel effects and parasitic resistances.
- 2010-07-25
著者
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Tagawa Yukio
Device Technology Department, Semiconductor Technology Development Division, Semiconductor Business Group Consumer Products & Devices Group, Sony Corporation, 4-14-1 Asahi-cho, Atsugi, Kanagawa 243-0014, Japan
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Tateshita Yasushi
Device Technology Department, Semiconductor Technology Development Division, Semiconductor Business Group Consumer Products & Devices Group, Sony Corporation, 4-14-1 Asahi-cho, Atsugi, Kanagawa 243-0014, Japan
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Wakabayashi Hitoshi
Device Technology Department, Semiconductor Technology Development Division, Semiconductor Business Group Consumer Products & Devices Group, Sony Corporation, 4-14-1 Asahi-cho, Atsugi, Kanagawa 243-0014, Japan
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Kikuchi Yoshiaki
Device Technology Department, Semiconductor Technology Development Division, Semiconductor Business Group Consumer Products & Devices Group, Sony Corporation, 4-14-1 Asahi-cho, Atsugi, Kanagawa 243-0014, Japan
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Miyanami Yuki
Device Technology Department, Semiconductor Technology Development Division, Semiconductor Business Group Consumer Products & Devices Group, Sony Corporation, 4-14-1 Asahi-cho, Atsugi, Kanagawa 243-0014, Japan
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Nagashima Naoki
Device Technology Department, Semiconductor Technology Development Division, Semiconductor Business Group Consumer Products & Devices Group, Sony Corporation, 4-14-1 Asahi-cho, Atsugi, Kanagawa 243-0014, Japan
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Miyanami Yuki
Device Technology Department, Semiconductor Technology Development Division, Semiconductor Business Group Consumer Products & Devices Group, Sony Corporation, 4-14-1 Asahi-cho, Atsugi, Kanagawa 243-0014, Japan
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Nagashima Naoki
Device Technology Department, Semiconductor Technology Development Division, Semiconductor Business Group Consumer Products & Devices Group, Sony Corporation, 4-14-1 Asahi-cho, Atsugi, Kanagawa 243-0014, Japan
関連論文
- Novel Damascene Gate Metal–Oxide–Semiconductor Field-Effect Transistors Fabricated by In situ Arsenic- and Boron-Doped Epitaxy
- Planar Metal–Oxide–Semiconductor Field-Effect Transistors with Raised Source and Drain Extensions Fabricated by In situ Boron-Doped Selective Silicon Epitaxy
- Dual metal/high-k gate-last complementary metal-oxide-semiconductor field-effect transistor with SiBN film and characteristic behavior in sub-1-nm equivalent oxide thickness