Planar Metal–Oxide–Semiconductor Field-Effect Transistors with Raised Source and Drain Extensions Fabricated by In situ Boron-Doped Selective Silicon Epitaxy
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概要
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Junction depth and parasitic resistance have a trade-off relationship. To improve this relationship, in situ boron-doped selective Si epitaxy was used to fabricate metal–oxide–semiconductor field-effect transistors (MOSFETs) with raised source and drain extensions and a facet. The amount of boron diffusion was small and the MOSFET also had low extension sheet resistance. Furthermore, with the optimization of four process parameters, spike rapid thermal annealing (RTA) temperature, halo dose, impurity concentration introduced by in situ doping, and epitaxial Si thickness, the relationship between the gate length at $I_{\text{off}}=100$ nA/μm and the drive current at $I_{\text{off}}=100$ nA/μm was improved.
- 2010-03-25
著者
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Yukio Tagawa
Device Technology Department, Semiconductor Technology Development Division, Semiconductor Business Group Consumer Products & Devices Group, Sony Corporation, 4-14-1 Asahi-cho, Atsugi, Kanagawa 243-0014, Japan
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Tateshita Yasushi
Device Technology Department, Semiconductor Technology Development Division, Semiconductor Business Group Consumer Products & Devices Group, Sony Corporation, 4-14-1 Asahi-cho, Atsugi, Kanagawa 243-0014, Japan
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Yasushi Tateshita
Device Technology Department, Semiconductor Technology Development Division, Semiconductor Business Group Consumer Products & Devices Group, Sony Corporation, 4-14-1 Asahi-cho, Atsugi, Kanagawa 243-0014, Japan
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Hitoshi Wakabayashi
Device Technology Department, Semiconductor Technology Development Division, Semiconductor Business Group Consumer Products & Devices Group, Sony Corporation, 4-14-1 Asahi-cho, Atsugi, Kanagawa 243-0014, Japan
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Kikuchi Yoshiaki
Device Technology Department, Semiconductor Technology Development Division, Semiconductor Business Group Consumer Products & Devices Group, Sony Corporation, 4-14-1 Asahi-cho, Atsugi, Kanagawa 243-0014, Japan
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Miyanami Yuki
Device Technology Department, Semiconductor Technology Development Division, Semiconductor Business Group Consumer Products & Devices Group, Sony Corporation, 4-14-1 Asahi-cho, Atsugi, Kanagawa 243-0014, Japan
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Naoki Nagashima
Device Technology Department, Semiconductor Technology Development Division, Semiconductor Business Group Consumer Products & Devices Group, Sony Corporation, 4-14-1 Asahi-cho, Atsugi, Kanagawa 243-0014, Japan
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Yuki Miyanami
Device Technology Department, Semiconductor Technology Development Division, Semiconductor Business Group Consumer Products & Devices Group, Sony Corporation, 4-14-1 Asahi-cho, Atsugi, Kanagawa 243-0014, Japan
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Yoshiaki Kikuchi
Device Technology Department, Semiconductor Technology Development Division, Semiconductor Business Group Consumer Products & Devices Group, Sony Corporation, 4-14-1 Asahi-cho, Atsugi, Kanagawa 243-0014, Japan
関連論文
- Novel Damascene Gate Metal–Oxide–Semiconductor Field-Effect Transistors Fabricated by In situ Arsenic- and Boron-Doped Epitaxy
- Planar Metal–Oxide–Semiconductor Field-Effect Transistors with Raised Source and Drain Extensions Fabricated by In situ Boron-Doped Selective Silicon Epitaxy
- Dual metal/high-k gate-last complementary metal-oxide-semiconductor field-effect transistor with SiBN film and characteristic behavior in sub-1-nm equivalent oxide thickness