Dielectric Degradation and Reversible Domain Motion in Ferroelectric Thin Films Evidenced by Double-Butterfly Capacitance–Voltage Loops with Sweeping Times from 500 ns to 1 s

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概要

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• Generally, the ferroelectric capacitance under a d.c. voltage drops continuously with time, and the shape of capacitance–voltage ($C$–$V$) loops within a sweeping time more than 1 s resemble a butterfly, in comparison to the double-butterfly shape of an antiferroelectric. In this work, we developed a measuring technique for shortening sweeping time down to 500 ns for the rapid study of dielectric relaxation in ferroelectric Pb(Zr,Ti)O3 thin films. It is interestingly found that the traditional butterfly loops of a ferroelectric degenerate into double butterfly loops of an antiferroelectric when the sweeping time is sufficiently short, providing evidence of the nonlinear dielectric contribution of reversible domain motion. Reversible domains can align along a field under a voltage, but reverses back immediately into their previous directions under a reduced field strength to release their polarization charges, similarly to antiferroelectric domains. When the voltage stressing time is sufficiently long, the internal field for driving reversible domain motion is temporally screened by the injected charges accumulated in regions with different polarizations, dielectric permittivities, and conductivities (domain pinning), which results in time-dependent dielectric degradation. This charge injection is different from the traditional model of defect motion with a low mobility. Finally, we showed evidence of the charge injection from the imprint profile and reversible domain freezing into irrecoverable domains upon cooling.

• 2010-06-25

著者

• TANG Ting-Ao

  State Key Laboratory of ASIC & System, Fudan University

• Ting-Ao Tang

  State Key Laboratory of ASIC and System, Department of Microelectronics, Fudan University, Shanghai 200433, People's Republic of China

• Jiang An-Quan

  State Key Laboratory of ASIC and System, Department of Microelectronics, Fudan University, Shanghai 200433, People's Republic of China

• An-Quan Jiang

  State Key Laboratory of ASIC and System, Department of Microelectronics, Fudan University, Shanghai 200433, People's Republic of China

関連論文

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• Quantum Mechanical Effects on the Threshold Voltage of Double-Gate Metal–Oxide–Semiconductor Field-Effect Transistors
• Dielectric Degradation and Reversible Domain Motion in Ferroelectric Thin Films Evidenced by Double-Butterfly Capacitance–Voltage Loops with Sweeping Times from 500 ns to 1 s

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