Multilevel Storage in Phase-Change Memory(Storage Technology)

スポンサーリンク

概要

• 論文の詳細を見る

• A novel ratio-oriented definition based on 2T2R (Two transistors & two phase change resistors) phase change memory (PCM) cell structure is proposed to gain a high density by multilevel storage. In this novel solution, no reference is needed and good robustness remains still as conventional 2T2R, which is crucial when feature size scales to nanometer technology node. A behavioral SPICE model together with a preliminary simulation proves the idea to be feasible, and further optimization has been carried out. In addition, based on the ratio-oriented definition, a simpler and faster Error Control Coding (ECC) can be realized with n-Error-detection feasible.

• 社団法人電子情報通信学会の論文
• 2007-03-01

著者

• Hong Yang

  State Key Laboratory Of Asic & System Fudan University

• Chen Bomy

  Sst Inc.

• LIN Yinyin

  State Key Laboratory of ASIC & System, Fudan University

• TANG Ting-Ao

  State Key Laboratory of ASIC & System, Fudan University

• Lin Yinyin

  State Key Laboratory Of Asic & System Fudan University

• Tang Ting-ao

  State Key Laboratory Of Asic & System Fudan University

関連論文

• Multilevel Storage in Phase-Change Memory(Storage Technology)
• Dielectric Degradation and Reversible Domain Motion in Ferroelectric Thin Films Evidenced by Double-Butterfly Capacitance–Voltage Loops with Sweeping Times from 500 ns to 1 s

スポンサーリンク