Ambipolar Behavior in Epitaxial Graphene-Based Field-Effect Transistors on Si Substrate

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概要

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• In this research, ambipolar behavior, which is one of graphene’s unique characteristics, is studied for the epitaxial graphene formed on 3C-SiC grown on a Si substrate. The graphene channel is believed to be unintentionally p-type-doped at Dirac-point voltages of approximately +0.11 to +0.12 V. However, as drain voltage negatively increases, Dirac point voltage shifts. The drain current in the p-channel mode of operation saturates at a lower level than that in the n-channel mode of operation. These behaviors are caused by asymmetric carrier transport throughout channel-substrate heterojunctions (i.e., graphene, thin n-type SiC layer, and p-type Si substrate) and source/drain Schottky metal contacts. The interface between the p-type Si substrate and n-type SiC has a significant effect on transport in graphene channels. The results may be helpful for understanding transport in the device and for suppressing ambipolar operation, leading to a unipolar FET operation.

• 2010-06-25

著者

• Hiroyuki Handa

  Research Institute of Electrical Communication, Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai 980-8577, Japan

• Hyun-Chul Kang

  Research Institute of Electrical Communication, Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai 980-8577, Japan

• Yu Miyamoto

  Research Institute of Electrical Communication, Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai 980-8577, Japan

• Tetsuya Suemitsu

  Research Institute of Electrical Communication, Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai 980-8577, Japan

• Hirokazu Fukidome

  Research Institute of Electrical Communication, Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai 980-8577, Japan

• Maki Suemitsu

  Research Institute of Electrical Communication, Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai 980-8577, Japan

• Taiichi Otsuji

  Research Institute of Electrical Communication, Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai 980-8577, Japan

• Roman Olac-vaw

  Research Institute of Electrical Communication, Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai 980-8577, Japan

• Hiromi Karasawa

  Research Institute of Electrical Communication, Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai 980-8577, Japan

関連論文

• Ambipolar Behavior in Epitaxial Graphene-Based Field-Effect Transistors on Si Substrate
• Extraction of Drain Current and Effective Mobility in Epitaxial Graphene Channel Field-Effect Transistors on SiC Layer Grown on Silicon Substrates

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