Organic Thin-Film Transistors with Transfer-Printed Au Electrodes on Flexible Substrates
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概要
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Bottom-gate, bottom-contact organic thin-film transistors (OTFTs) based on 6,13-bis(tri-isopropylsilylethynyl) pentacene (TIPS-pentacene) were fabricated on flexible substrates by transfer-printing and solution-based processes and their performances were characterized. Au gate and source/drain electrodes were transfer-printed from a release-layer-coated flexible mold at 2.4 MPa and 120 °C in ambient air. A polymer gate dielectric of poly(4-vinyl phenol) (PVP) and an active layer of TIPS-pentacene were deposited by solution processing. In addition, the TFT characteristics in channels of 40 and 4 μm length were compared. Also, the lack of saturation of the drain–source current ($I_{\text{DS}}$) was investigated by considering the output characteristics in a short channel.
- 2010-05-25
著者
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Char Kookheon
School Of Chemical And Biological Engineering And Nano Systems Institute-national Core Research Cent
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Kookheon Char
School of Chemical and Biological Engineering, Seoul National University, Seoul 151-744, Korea
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Yongtaek Hong
School of Electrical Engineering and Computer Science, Inter-University Semiconductor Research Center, Seoul National University, Seoul 151-744, Korea
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Cho Hyunduck
School of Electrical Engineering and Computer Science, Inter-University Semiconductor Research Center, Seoul National University, Seoul 151-744, Korea
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Yoon Hyunsik
School of Chemical and Biological Engineering, Seoul National University, Seoul 151-744, Korea
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Changhee Lee
School of Electrical Engineering and Computer Science, Inter-University Semiconductor Research Center, Seoul National University, Seoul 151-744, Korea
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Hyunsik Yoon
School of Chemical and Biological Engineering, Seoul National University, Seoul 151-744, Korea
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Hyunduck Cho
School of Electrical Engineering and Computer Science, Inter-University Semiconductor Research Center, Seoul National University, Seoul 151-744, Korea
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