Can Acid Amplifiers Help Beat the Resolution, Line Edge Roughness, and Sensitivity Trade-Off?

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概要

• 論文の詳細を見る

• In this paper, we describe the structures of several new acid amplifiers and of extreme ultraviolet (EUV) resist formulations prepared from them. We have synthesized and lithographically evaluated eleven new compounds specifically designed for use as acid amplifiers in EUV resists. We make direct comparisions between resolution, line-edge roughness (LER) and sensitivity using the common resolution, line-edge roughness, and sensitivity (RLS) analysis technique of $Z$-parameter. We show that acid amplifiers are capable of simultaneously improving resolution, LER, and sensitivity.

• 2010-04-25

著者

• Seth Kruger

  College of Nanoscale Science and Engineering, University at Albany, NY 12203, U.S.A

• Kruger Seth

  College of Nanoscale Science and Engineering, University at Albany, NY 12203, U.S.A

• Higgins Craig

  College of Nanoscale Science and Engineering, University at Albany, NY 12203, U.S.A

• Revuru Srividya

  State University of New York at New Paltz, NY 12561, U.S.A.

• Sarah Gibbons

  College of Nanoscale Science and Engineering, University at Albany, NY 12203, U.S.A

• Dan Freedman

  State University of New York at New Paltz, NY 12561, U.S.A.

• Robert L.

  College of Nanoscale Science and Engineering, University at Albany, NY 12203, U.S.A

• Higgins Craig

  College of Nanoscale Science and Engineering, University at Albany, Albany, NY 12203, U.S.A.

• Srividya Revuru

  State University of New York at New Paltz, NY 12561, U.S.A.

関連論文

• Resolution, Line-Edge Roughness, Sensitivity Tradeoff, and Quantum Yield of High Photo Acid Generator Resists for Extreme Ultraviolet Lithography
• Can Acid Amplifiers Help Beat the Resolution, Line Edge Roughness, and Sensitivity Trade-Off?

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