Suppression of Critical Current in Submicron Intrinsic Josephson Junction Fabricated in a Bi2Sr2Ca2Cu3O10+δ Single Crystal Whisker

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概要

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• We have fabricated intrinsic Josephson junction array stack in a Bi2Sr2Ca2Cu3O10+δ (Bi-2223) single crystal whisker using three dimensional focused ion beam milling technique. We report measurements of current density depend on junctions array at 30 K upon the junction cross-sectional area $S$ showing a strong suppression in critical current density for junctions with $S\leq 1$ μm2. We discussed quantum fluctuations of phase in submicron junctions which is a cause for suppression of critical current density.

• 2010-04-25

著者

• Shrikant Saini

  Graduate School of Science and Technology, Jeju National University, Jeju 690756, Korea

• Gui Shik

  Department of Mechanical, Energy, and System Engineering, Jeju National University, Jeju 690756, Korea

• Saini Shrikant

  Graduate School of Science and Technology, Jeju National University, Jeju 690756, Korea

• Kim Gui

  Department of Mechanical, Energy, and System Engineering, Jeju National University, Jeju 690756, Korea

• Kim Sang-Jae

  Department of Mechatronics Engineering and Research Institute of Advanced Technology, Faculty of Engineering, Jeju National University, Jeju 690756, Korea

• Sang-Jae Kim

  Department of Mechatronics Engineering and Research Institute of Advanced Technology, Faculty of Engineering, Jeju National University, Jeju 690756, Korea

関連論文

• Suppression of Critical Current in Submicron Intrinsic Josephson Junction Fabricated in a Bi2Sr2Ca2Cu3O10+δ Single Crystal Whisker
• Development of Focused Ion Beam Machining Systems for Fabricating Three-Dimensional Structures

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