Dislocation-Based Si-Nanodevices
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概要
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The realization of defined dislocation networks by hydrophobic wafer bonding allows the electrical characterization of individual dislocations. The present paper investigates the properties of such dislocations in samples containing high dislocations densities down to only six dislocations. The current induced by a single dislocation is determined by extrapolation of the current measured for various dislocation densities. Based on our present and previously reported analyses the electronic properties of individual dislocations can be inferred. The investigations show that dislocations in the channel of metal–oxide–semiconductor field-effect transistors (MOSFETs) result in increasing drain currents even at low drain and gate voltages. Because a maximum increase of the current is obtained if a single dislocation is present in the channel, arrays of MOSFETs each containing only one dislocation could be realized on the nanometer scale. The distance of the dislocations can be well controlled by wafer bonding techniques.
- 2010-04-25
著者
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REICHE Manfred
Max-Planck-Institut fur Mikrostrukturphysik
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Qing-Tai Zhao
Institut für Bio- und Nanosysteme (IBN-1) and JARA—Fundamentals of Future Information Technology, Forschungszentrum Jülich, D-52425 Jülich, Germany
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Kittler Martin
IHP Frankfurt (Oder), Im Technologiepark 25, D-15236 Frankfurt (Oder), Germany
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Buca Dan
Institut für Bio- und Nanosysteme (IBN-1) and JARA—Fundamentals of Future Information Technology, Forschungszentrum Jülich, D-52425 Jülich, Germany
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Angelika Hähnel
Max-Planck-Institut für Mikrostrukturphysik, Weinberg 2, D-06120 Halle, Germany
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Siegfried Mantl
Institut für Bio- und Nanosysteme (IBN-1) and JARA—Fundamentals of Future Information Technology, Forschungszentrum Jülich, D-52425 Jülich, Germany
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Ulrich Gösele
Max-Planck-Institut für Mikrostrukturphysik, Weinberg 2, D-06120 Halle, Germany
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Martin Kittler
IHP Frankfurt (Oder), Im Technologiepark 25, D-15236 Frankfurt (Oder), Germany
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Siegfried Mantl
Institut für Bio- und Nanosysteme (IBN-1) and JARA—Fundamentals of Future Information Technology, Forschungszentrum Jülich, D-52425 Jülich, Germany
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Ulrich Gösele
Max-Planck-Institut für Mikrostrukturphysik, Weinberg 2, D-06120 Halle, Germany
関連論文
- Characterization of Interfaces of Directly Bonded Slicon Wafers: A Comparative Study of Secondary Ion Mass Spectroscopy Multiple Internal Reflection Spectroscopy, and Transmission Electron Microscopy
- Dislocation-Based Si-Nanodevices
- Fabrication and characteristics of Germanium-on-Insulator