Optimal Channel Ion Implantation for High Memory Margin of Capacitor-Less Memory Cell Fabricated on Fully Depleted Silicon-on-Insulator

概要

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The effect of channel doping concentration on the memory margin of capacitor-less (Cap-less) memory cells fabricated on fully depleted silicon-on-insulator (SOI) n-metal–oxide–semiconductor field-effect transistors (MOSFETs) was investigated. It was observed that the memory margin of Cap-less memory cells is significantly varied by the channel doping concentration, i.e., it increases with doping concentrations up to $1.4 \times 10^{17}$ cm-3 and then decreases with higher doping concentrations. In particular, at a concentration of $1.4 \times 10^{17}$ cm-3 it increased 1.8 times compared with that at $1.5 \times 10^{15}$ cm-3. This gives rise to speculation that the memory margin of Cap-less memory cells fabricated on fully depleted SOI n-MOSFETs can be increased by enlarging the lateral electric field and can be decreased by reducing the current density. These results suggest that a higher memory margin in Cap-less memory cells can be obtained by optimizing channel doping concentration in fully depleted SOI n-MOSFETs.
2010-03-25