Evaluation of Refilled Channel Regions in 4H-SiC Buried Gate Static Induction Transistors

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概要

• 論文の詳細を見る

• We evaluated the crystalline quality of the channel region in silicon carbide buried gate static induction transistors (SiC-BGSITs) by transmission electron microscopy (TEM) and scanning spreading resistance microscopy (SSRM). TEM observations revealed that no crystalline defects were generated in the channel region of SiC-BGSITs during epitaxial regrowth in trenches. The SSRM result indicated that the refilled channel region had a spreading resistance distribution of about ten times due to a high noise resulting from contact resistance. This noise was so high that we could not detect carrier density distributions from SSRM signals. However, on the basis of the leakage current and blocking characteristics of the SiC-BGSITs, we confirmed that there was no serious carrier density distribution that affected the device operation in the channel region.

• 2010-03-25

著者

• Tsutomu Yatsuo

  Energy Semiconductor Electronics Research Laboratory, National Institute of Advanced Industrial Science and Technology, Central 2, 1-1-1 Umezono, Tsukuba, Ibaraki 305-8568, Japan

• Takatsuka Akio

  Energy Semiconductor Electronics Research Laboratory, National Institute of Advanced Industrial Science and Technology, Central 2, 1-1-1 Umezono, Tsukuba, Ibaraki 305-8568, Japan

• Tanaka Yasunori

  Energy Semiconductor Electronics Research Laboratory, National Institute of Advanced Industrial Science and Technology, Central 2, 1-1-1 Umezono, Tsukuba, Ibaraki 305-8568, Japan

• Yano Koji

  Interdisciplinary Graduate School of Medical and Engineering, University of Yamanashi, 4-3-11 Takeda, Kofu 400-8511, Japan

• Kazuo Arai

  Research and Innovation Promotion Office, National Institute of Advanced Industrial Science and Technology, Central 2, 1-1-1 Umezono, Tsukuba, Ibaraki 305-8568, Japan

• Akio Takatsuka

  Energy Semiconductor Electronics Research Laboratory, National Institute of Advanced Industrial Science and Technology, Central 2, 1-1-1 Umezono, Tsukuba, Ibaraki 305-8568, Japan

• Koji Yano

  Interdisciplinary Graduate School of Medicine and Engineering, University of Yamanashi, 4-3-11 Takeda, Kofu 400-8511, Japan

関連論文

• Evaluation of Refilled Channel Regions in 4H-SiC Buried Gate Static Induction Transistors
• Shape Transformation of 4H-SiC Microtrenches by Hydrogen Annealing

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