Shape Transformation of 4H-SiC Microtrenches by Hydrogen Annealing
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概要
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This study investigates the shape transformation of 4H-SiC microtrenches that occurs during high-temperature hydrogen annealing, which is used to improve growth on such prepared substrates. The trenches have micron-sized widths and depths and were annealed in hydrogen ambient at temperatures of 1400–1600 °C for 30–3600 s. After hydrogen annealing, cross-sectional images of the samples were obtained by scanning electron microscopy (SEM). These SEM images reveal that the top and bottom trench corners become rounded during hydrogen annealing. The top trench corners become rounded by an etching reaction, whereas the bottom trench corners become rounded as a result of a regrowth phenomenon that involves the transportation of atoms. This study analyzes the mechanism of these transformations in terms of Mullins’ continuum model. The results suggest that the evaporation–condensation process is dominant in the case of SiC annealing.
- 2009-04-25
著者
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Yatsuo Tsutomu
Energy Semiconductor Electronics Research Laboratory (ESERL), National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba Central 2, 1-1-1 Umezono, Tsukuba, Ibaraki 305-8568, Japan
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Yatsuo Tsutomu
Energy Semiconductor Electronics Research Laboratory, National Institute of Advanced Industrial Science and Technology, Central 2, 1-1-1 Umezono, Tsukuba, Ibaraki 305-8568, Japan
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Takatsuka Akio
Energy Semiconductor Electronics Research Laboratory, National Institute of Advanced Industrial Science and Technology, Central 2, 1-1-1 Umezono, Tsukuba, Ibaraki 305-8568, Japan
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Tanaka Yasunori
Energy Semiconductor Electronics Research Laboratory, National Institute of Advanced Industrial Science and Technology, Central 2, 1-1-1 Umezono, Tsukuba, Ibaraki 305-8568, Japan
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Yano Koji
Interdisciplinary Graduate School of Medical and Engineering, University of Yamanashi, 4-3-11 Takeda, Kofu 400-8511, Japan
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Ishida Yuuki
Energy Semiconductor Electronics Research Laboratory, National Institute of Advanced Industrial Science and Technology, Central 2, 1-1-1 Umezono, Tsukuba, Ibaraki 305-8568, Japan
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Arai Kazuo
Research and Innovation Promotion Office, National Institute of Advanced Industrial Science and Technology, Central 2, 1-1-1 Umezono, Tsukuba, Ibaraki 305-8568, Japan
関連論文
- Evaluation of Refilled Channel Regions in 4H-SiC Buried Gate Static Induction Transistors
- Shape Transformation of 4H-SiC Microtrenches by Hydrogen Annealing
- Electrical Properties of 4H-Silicon Carbide Complementary Metal–Oxide–Semiconductor Devices with Wet-Processed Gate Oxide