Structure and Magnetic Properties of Mn-Implanted ZnO Films
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概要
- 論文の詳細を見る
Unintentionally doped n-ZnO(0002) films prepared by pulse laser deposition were implanted with various doses of Mn+. Photoluminescence measurement revealed that the incorporation of Mn in the films shifts the near band edge position towards the higher energy side. Magnetism measurements of the Mn-implanted samples showed clear magnetic properties. Magnetization–field hysteresis loops were observed at 300 K and the temperature-dependent magnetization showed magnetic behavior up to 350 K, which is in agreement with the theoretical prediction.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2010-03-25
著者
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Dejun Fu
Accelerator Laboratory, Department of Physics, Wuhan University, Wuhan 430072, China
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Ke Xianwen
Accelerator Laboratory, Department of Physics, Wuhan University, Wuhan 430072, China
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Zou Changwei
Accelerator Laboratory, Department of Physics, Wuhan University, Wuhan 430072, China
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Li Ming
Accelerator Laboratory, Department of Physics, Wuhan University, Wuhan 430072, China
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Chuangsheng Liu
Accelerator Laboratory, Department of Physics, Wuhan University, Wuhan 430072, China
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Liping Guo
Accelerator Laboratory, Department of Physics, Wuhan University, Wuhan 430072, China
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Xianwen Ke
Accelerator Laboratory, Department of Physics, Wuhan University, Wuhan 430072, China
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Changwei Zou
Accelerator Laboratory, Department of Physics, Wuhan University, Wuhan 430072, China
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Ming Li
Accelerator Laboratory, Department of Physics, Wuhan University, Wuhan 430072, China