Low-Voltage Pentacene Field-Effect Transistors Fabricated on High-Dielectric-Constant Strontium Titanate Insulator

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概要

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• A strontium titanate (SrTiO3) thin film on a heavily doped n-type silicon wafer prepared by sputtering was characterized by various means. The result indicated that the thin film mainly consisted of an 87-nm-thick amorphous SrTiO3 with a $\text{Sr}:\text{Ti}:\text{O}$ ratio of $1:1.3:4.7$, a dielectric constant of $\varepsilon_{\text{r}}=12.1$, and a leakage current density of 0.2 nA/cm2 at an electric field of 1 MV/cm. Pentacene field-effect transistors fabricated using the SrTiO3 thin film as an insulator, showed well-saturated output characteristics at low driving voltages ($V_{\text{D}}=-3$ V), and a hole mobility of 0.08 cm2 V-1 s-1, an on/off current ratio of $10^{4}$, and threshold voltage of $-0.7$ V.

• 2010-03-25

著者

• Yan Hu

  Laboratory Of Organic Robotics Interdisciplinary Graduate School Of Medicine And Engineering Univers

• JO Toshihiko

  Laboratory of Organic Robotics, Interdisciplinary Graduate School of Medicine and Engineering, Unive

• Okuzaki Hidenori

  Laboratory Of Organic Robotics Interdisciplinary Graduate School Of Medicine And Engineering Univers

• Hu Yan

  Laboratory of Organic Robotics, Interdisciplinary Graduate School of Medicine and Engineering, University of Yamanashi, 4-4-37 Takeda, Kofu 400-8511, Japan

• Toshihiko Jo

  Laboratory of Organic Robotics, Interdisciplinary Graduate School of Medicine and Engineering, University of Yamanashi, 4-4-37 Takeda, Kofu 400-8511, Japan

• Hidenori Okuzaki

  Laboratory of Organic Robotics, Interdisciplinary Graduate School of Medicine and Engineering, University of Yamanashi, 4-4-37 Takeda, Kofu 400-8511, Japan

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