Highly Conductive and Transparent Poly(3,4-ethylenedioxythiophene)/Poly(4-styrenesulfonate) (PEDOT/PSS) Thin Films
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概要
- 論文の詳細を見る
- 2009-12-15
著者
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Yan Hu
Laboratory Of Organic Robotics Interdisciplinary Graduate School Of Medicine And Engineering Univers
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Yan Hu
山梨大学 医学工学総合研究部
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Hu Yan
Interdisciplinary Graduate School Of Medicine And Engineering University Of Yamanashi
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JO Toshihiko
Laboratory of Organic Robotics, Interdisciplinary Graduate School of Medicine and Engineering, Unive
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OKUZAKI Hidenori
Laboratory of Organic Robotics, Interdisciplinary Graduate School of Medicine and Engineering, Unive
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Okuzaki Hidenori
Laboratory Of Organic Robotics Interdisciplinary Graduate School Of Medicine And Engineering Univers
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Okuzaki Hidenori
Department Of Applied Chemistry Interdisciplinary Graduate School Of Medicine And Engineering Univer
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Jo Toshihiko
Department Of Applied Chemistry Interdisciplinary Graduate School Of Medicine And Engineering Univer
関連論文
- Low-voltage pentacene field-effect transistors fabricated on high-dielectric-constant strontium titanate insulator
- Highly Conductive and Transparent Poly(3,4-ethylenedioxythiophene)/Poly(4-styrenesulfonate) (PEDOT/PSS) Thin Films
- Plastic Shottky Barriers Fabricated by a Line Patterning Technology
- Novel Bimorph-Structured Hydrogel Containing Segregated Polymer Surfactant
- Unusual Shapes of C_ Crystals Formed at Liquid-Liquid Interfaces
- Influence of Surface Energy and Roughness of Substrate on Thin Pentacene and C_ Films Prepared by Vacuum Deposition
- Micrometer-scaled Channel Lengths of Organic Field-effect Transistors Patterned by Using PEDOT/PSS Microfibers
- Potential application of highly conductive and transparent poly(3,4-ethylenedioxythiophene)/poly(4-styrenesulfonate) thin films to touch screen as a replacement for indium tin oxide electrode
- Potential application of highly conductive and transparent poly(3,4-ethylenedioxythiophene)/poly(4-styrenesulfonate) thin films to touch screen as a replacement for indium tin oxide electrode
- Low-Voltage Pentacene Field-Effect Transistors Fabricated on High-Dielectric-Constant Strontium Titanate Insulator