Pixel Circuit for Organic Light-Emitting Diode-on-Silicon Microdisplays Using the Source Follower Structure
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概要
- 論文の詳細を見る
In this paper, we propose a new pixel circuit for organic light-emitting diode-on-silicon (OLEDoS) microdisplays. The proposed pixel circuit is composed of only two metal oxide semiconductor field-effect transistors (MOSFETs) and one capacitor in order to integrate the pixel circuit into the restricted pixel area ($12.6\times 4.2$ μm2). The proposed pixel circuit has a source follower structure that can control an extremely low emission current. The measured results show that the maximum deviation in the emission current of the proposed pixel circuit occurs at the highest gray level of 6 bits. The deviations in the measured emission current range from $-0.9$ least significant bit (LSB) to +1.0 LSB among 8 pixels.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2010-03-25
著者
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Oh-Kyong Kwon
Division of Electronics and Computer Engineering, Hanyang University, 17 Haengdang-dong, Seongdong-gu, Seoul 133-791, Korea
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Lim Han-Sin
Division of Electrical and Computer Engineering, Hanyang University, 17 Haengdang-dong, Seongdong-gu, Seoul 133-791, Korea
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Kim Hyuk
Division of Electronics and Computer Engineering, Hanyang University, 17 Haengdang-dong, Seongdong-gu, Seoul 133-791, Korea
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Kwak Bong-Choon
Division of Electronics and Computer Engineering, Hanyang University, 17 Haengdang-dong, Seongdong-gu, Seoul 133-791, Korea
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Han-Sin Lim
Division of Electronics and Computer Engineering, Hanyang University, 17 Haengdang-dong, Seongdong-gu, Seoul 133-791, Korea
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Bong-Choon Kwak
Division of Electronics and Computer Engineering, Hanyang University, 17 Haengdang-dong, Seongdong-gu, Seoul 133-791, Korea
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Hyuk Kim
Division of Electronics and Computer Engineering, Hanyang University, 17 Haengdang-dong, Seongdong-gu, Seoul 133-791, Korea
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