Influence of the Density of Crack-Initiating Defects on Crack Spacing for GaN Films on Si(111) Substrate

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概要

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• This study examines the cracking of GaN films grown on Si(111) substrates, with particular focus on the effect of the density of crack-initiating defects (CIDs) on the crack spacing. The relationship between the CID density and crack spacing was examined by comparing specimens of the same thickness and under the same stress but with different CID density. The CID density in the GaN layer was changed by varying the ion-implanted area using patterning prior to metal–organic chemical vapor deposition (MOCVD) growth. The crack spacing decreased with increasing CID density, but this effect could not be explained by the previous model. Therefore, a CID-density related factor, $n_{\text{d}}$, was newly introduced to explain the crack spacing and film stress relationship.

• 2010-02-25

著者

• KIM Bumjoon

  Department of Materials Science, Korea University

• Jang Samseok

  Department of Materials Science and Engineering, Korea University, Seoul 136-713, Korea

• Jong Hyeob

  LED Device Team, Korea Photonics Technology Institute, 5 Cheomdan 4-gil, Buk-gu, Kwangjoo 500-779, Korea

• Jaesang Lee

  Proton Engineering Frontier Project, Korea Atomic Energy Research Institute, 150-1 Deokjin-dong, 1045 Daedeokdaero, Yuseong, Daejeon 305-353, Korea

• Jhin Junggeun

  LED Device Team, Korea Photonics Technology Institute, 5 Cheomdan 4-gil, Buk-gu, Kwangjoo 500-779, Korea

• Seungjae Lee

  LED Device Team, Korea Photonics Technology Institute, 5 Cheomdan 4-gil, Buk-gu, Kwangjoo 500-779, Korea

• Youngmoon Yu

  LED Device Team, Korea Photonics Technology Institute, 5 Cheomdan 4-gil, Buk-gu, Kwangjoo 500-779, Korea

• Dongjin Byun

  Department of Materials Science and Engineering, Korea University, 5 Anam-dong, Seongbuk-gu, Seoul 136-713, Korea

• Junggeun Jhin

  LED Device Team, Korea Photonics Technology Institute, 5 Cheomdan 4-gil, Buk-gu, Kwangjoo 500-779, Korea

• Bumjoon Kim

  Department of Materials Science and Engineering, Korea University, 5 Anam-dong, Seongbuk-gu, Seoul 136-713, Korea

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• Influence of the Density of Crack-Initiating Defects on Crack Spacing for GaN Films on Si(111) Substrate
• Study of a-Plane GaN Epitaxial Lateral Overgrowth Using Carbonized Photoresist Mask on r-Plane Sapphire

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