Electrical Conduction across the Direct Contact between Indium–Tin Oxide and Al–Ni Alloy Layers

概要

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The electrical conduction across direct contacts between indium–tin oxide (ITO) and the newly developed Al–Ni alloys, used for amorphous silicon thin-film transistors (a-Si TFTs) in liquid crystal displays (LCDs), has been studied. The ITO/Al–Ni alloy interfaces were examined by both electrical measurements using nanoprobes and cross-sectional transmission electron microscopy (XTEM). It was found that the major conduction path across the ITO/Al–Ni alloy interface was via Al3Ni precipitates, and that the resistivity of the ITO/Al–Ni alloy contact strongly depended on the conditions of the Al–Ni alloy surface. It was thus concluded that the generation of non-oxidized Al3Ni precipitates after photoresist stripping is important for high-quality direct contacts. The present results on the Al–Ni alloy compositions and ITO/Al–Ni alloy interfaces have already been considered in the actual production of a-Si TFTs for LCDs.
2010-11-25