An Analysis on the Electrical Short in a Large Area Organic Thin Film Transistor Array with the Poly(4-vinylphenol) Gate Dielectrics

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概要

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• We have investigated electrical shorts occurring in organic thin film transistors (OTFTs) containing poly(4-vinylphenol) (PVP) as dielectrics. Structural and compositional analyses reveal that electrical shorts occur due to the agglomeration of the PVP layer. The agglomeration has been successfully suppressed by optimizing the soft-baking conditions in the PVP forming process, which resulted in acceptable levels of leakage current and breakdown voltage. The fabricated OTFT within the optimized baking conditions exhibited performances which satisfy the conditions for display applications.

• 2009-08-25

著者

• Moon Jaehyun

  Convergence Components and Materials Laboratory, Electronics and Telecommunications Research Institute (ETRI), 138 Gajeong-ro, Yuseong-gu, Daejeon 305-700, Korea

• Park Byung-Ok

  Department of Electronic Materials Engineering, Kyungpook National University, 1370 Sankyuk-dong, Buk-gu, Daegu 702-701, Korea

• Park Dong-Jin

  Department of Electronic Materials Engineering, Kyungpook National University, 1370 Sankyuk-dong, Buk-gu, Daegu 702-701, Korea

関連論文

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