The Reduction of Elastic Energy Density in InN Growth on ($hkl$)-Oriented Planes

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概要

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• Simple calculations performed in the context of linear elasticity theory, indicate that growth of InN on ($hkl$)-oriented substrates minimizes the density of elastic energy stored in the strained layers and boosts the critical thickness for coherent growth of strained layers to unexpected values. This renders possible to grow two-dimensional InN–GaN structures with InN layers thicknesses larger than one monolayer and, in addition, continuous in the growth plane. How impacting this finding can be for optoelectronic devices using indium nitride-based heterostructures is finally discussed.

• 2009-05-25

著者

• Gil Bernard

  Université Montpellier 2, Groupe d'Etude des Semiconducteurs, UMR CNS 5650, Case Courrier 074, 34095 Montpellier CEDEX 5, France

• Briot Olivier

  Université Montpellier 2, Groupe d'Etude des Semiconducteurs, UMR CNS 5650, Case Courrier 074, 34095 Montpellier CEDEX 5, France

• Bigenwald Pierre

  Laboratoire de Sciences des Matériaux d'Electronique et d'Automatique, Clermont Université, 24, av des Landais, 63177 Aubière CEDEX France

• Briot Olivier

  Université Montpellier 2, Groupe d'Etude des Semiconducteurs, UMR CNS 5650, Case Courrier 074, 34095 Montpellier CEDEX 5, France

• Bigenwald Pierre

  Laboratoire de Sciences des Matériaux d'Electronique et d'Automatique, Clermont Université, 24, av des Landais, 63177 Aubière CEDEX France

関連論文

• The Reduction of Elastic Energy Density in InN Growth on ($hkl$)-Oriented Planes
• Strain-Fields Effects and Reversal of the Nature of the Fundamental Valence Band of ZnO Epilayers : Semiconductors

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