Franz Dispersion Relation for Tunneling Simulations in Polycrystalline Silicon/SiO2/Si3N4/SiO2/Si and TaN/Al2O3/Si3N4/SiO2/Si Structures

概要

論文の詳細を見る
The applicability of the Franz-type dispersion relation for simulations of tunneling in polycrystalline silicon–oxide–nitride–oxide–silicon (SONOS) and tantalum nitride–aluminium oxide–nitride–oxide–silicon (TANOS) non-volatile memories is demonstrated. A full set of corresponding expressions is provided. Compared to the usual parabolic laws for carriers, Franz law enables a more natural modeling of the tunneling transport with energies close to the middle of the forbidden gaps in insulators. In addition to the methodical correctness, the potential advantages of the Franz relation with respect to SONOS/TANOS modeling are due to a slower increase of the current components with the electric field compared to the case of parabolic laws, i.e., due to the effect known for simple metal–insulator–semiconductor (MIS) structures.
Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
2009-05-25