Optimal Integration Process for Elimination of Abnormal Striation on Wafer Dual Damascene Processes

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概要

• 論文の詳細を見る

• This paper is focused on optimal lithography processes using copper back-end-of-line (BEOL) semiconductor wafer integration technology and a solution to the problem of defect reduction on a semiconductor wafer. The pattern collapse observed in this process and numerous defects were prevented by optimizing the process module tuning. A novel semiconductor process on various pattern designs and deep pattern aspect ratio effects of a submicron semiconductor structure were included in this study. In addition to the experimental wafer manufacturing process, the electrical device data and defect reduction checking were also included.

• Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
• 2009-04-25

著者

• Weng Chun-Jen

  Department of Technology Management, Leader University, Tainan 709, Taiwan, R.O.C.

関連論文

• Optimal Integration Process for Elimination of Abnormal Striation on Wafer Dual Damascene Processes

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