A Novel Triangularity of $Q$-Curve Methodology for Si Inductors Design Automation
スポンサーリンク
概要
- 論文の詳細を見る
In this article, a simplified equivalent circuit in a proposed closed-form expression is combined with a triangularity quality factor ($Q$) curve design (TQ) methodology for spiral inductors to obtain an automated optimal design. At first, a closed-form expression is combined with a dual-port equivalent circuit model that has a substrate electromagnetic coupling effect that describes the characteristics of the Taiwan Semiconductor Manufacturing Company (TSMC) 0.35 μm process to produce a spiral inductor. The $Q$-curve triangularity characteristic relationship is to verify the accuracy of the model. After comparing the simulated and measured values, the total errors of S parameter and errors of inductance are lower than 0.71 and 7%, respectively. In summary, the enumeration method is used to design all structures that satisfy 1.5 and 3.0 nH and obtain the relationship between the $Q$-curve peak and the triangularity characteristic, which is also used as the condition for an optimal spiral inductor. The TQ design methodology obtains almost the same optimal structural characteristic as the enumeration method, but only uses half the time. Furthermore, under the restriction of multiple conditions, the design of spiral inductors can approach process limits and optimal performance.
- 2009-04-25
著者
-
Lee Chih-yuan
Semiconductor Laboratory Dept. Of Applied Physics Chung Cheng Institute Of Technology National Defen
-
Lee Chih-Yuan
Semiconductor Laboratory, Department of Electrical and Electronic Engineering, Chung Cheng Institute of Technology, National Defense University, No. 190, Sanyuan 1st St., Tahsi, Taoyuan 335, Taiwan, R.O.C.
関連論文
- Prominent Study on Si Substrate EM Loss and Suppressing Techniques
- A Novel Triangularity of $Q$-Curve Methodology for Si Inductors Design Automation