On the Large Threshold Voltage Shifts of Nano-structured Thin Film Electroluminescent Devices

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概要

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• A large threshold voltage shift ($\Delta V_{\text{th}}$) seen in the nano-structured-thin film electroluminescent device (NS-TFELD) has been studied with simple formulas derived from the continuity of the electric flux density through the nano-structured dielectric layers. The electric fields in the emission layers and the tunneling rate from the interface state are dependent on the material and geometric parameters consisting of the emission layer, being different from those of the conventional TFELD. The estimates of $\Delta V_{\text{th}}$ in NS-TFELD are in good agreement with the experimental data, implying that NS-TFELD operating at very low voltages will be realized.

• Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
• 2009-03-25

著者

• Adachi Daisuke

  Graduate School Of Engineering Nagoya University

• Adachi Daisuke

  Graduate School of Engineering Science, Osaka University, Toyonaka, Osaka 560-8531, Japan

• Sohn Sangho

  Department of Physics, Kyungpook National University, Daegu 702-701, Korea

• Choi Seokcheol

  Department of Physics, Kyungpook National University, Daegu 702-701, Korea

• Toyama Toshihiko

  Graduate School of Engineering Science, Osaka University, Toyonaka, Osaka 560-8531, Japan

• Okamoto Hiroaki

  Graduate School of Engineering Science, Osaka University, Toyonaka, Osaka 560-8531, Japan

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• On the Large Threshold Voltage Shifts of Nano-structured Thin Film Electroluminescent Devices

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