Vacancy Generation in Si During Solid–Liquid Transition Observed by Positron Annihilation Spectroscopy

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概要

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• The Doppler broadening of annihilation radiation (DBAR) measurements were performed on Czochralski and floating-zone-grown Si crystals near the melting point using a positron microbeam. Below 1380 °C, the DBAR spectra showed essentially no change. In a very narrow temperature range near the melting point, the peak intensities of the DBAR spectra ($S$ parameter) decreased by approximately 1% suggesting an increase in material density. Upon further heating, the $S$ parameter markedly increased until melting. This indicates the formation of thermal vacancies. Compared with theoretical calculation, both monovacancies and divacancies are considered to be formed.

• Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
• 2009-03-25

著者

• Kawasuso Atsuo

  Advanced Science Research Center, Japan Atomic Energy Agency, 1233, Watanuki, Takasaki, Gunma 370-1292, Japan

• Maekawa Masaki

  Advanced Science Research Center, Japan Atomic Energy Agency, 1233, Watanuki, Takasaki, Gunma 370-1292, Japan

関連論文

• Vacancy Generation in Si During Solid–Liquid Transition Observed by Positron Annihilation Spectroscopy

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