Hot-Carrier Effect in Polycrystalline Silicon n-Channel Lightly Doped Drain Thin-Film Transistors with Low n- Impurity Concentration

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概要

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• Hot-carrier effect in low-temperature n-channel polycrystalline silicon (poly-Si) lightly doped drain (LDD) thin-film transistors (TFTs) for various n- doping concentrations was examined by using a two-dimensional (2D) device simulation. It was found that, in the case of a low n- doping concentration for a high applied gate voltage, large potential drops appeared at the source side and the drain side. This was because of the reduced potential drop in the channel region, giving rise to a high lateral field and an impact ionization rate at both the source and the drain sides. These results suggested that the hot-carrier degradation due to avalanche hot-carriers occurred at both the source and the drain sides in a high-applied-gate-voltage region in the case of a low n- doping concentration, while, in the case of low gate voltage, the degradation occurred at only the high-field drain side. Therefore, the n- doping concentration should be optimized to minimize the hot-carrier degradation in the source side and the drain side.

• Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
• 2009-03-25

著者

• Yamagata Masahiro

  Tokyo Polytechnic University, 1583 Iiyama, Atsugi, Kanagawa 243-0297, Japan

• Satoh Toshifumi

  Tokyo Polytechnic University, 1583 Iiyama, Atsugi, Kanagawa 243-0297, Japan

• Tango Hiroyuki

  Tokyo Polytechnic University, 1583 Iiyama, Atsugi, Kanagawa 243-0297, Japan

関連論文

• Stress-Induced Off-Current under On- and Off-State Stress Voltages in Low-Temperature n-Channel Polycrystalline Silicon Thin-Film Transistors
• Hot-Carrier Effect in Polycrystalline Silicon n-Channel Lightly Doped Drain Thin-Film Transistors with Low n- Impurity Concentration

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