Crystallization and Melting Kinetics of Zn-Doped Fast-Growth Sb70Te30 Phase-Change Recording Films
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概要
- 論文の詳細を見る
Doping Zn into the fast-growth Sb70Te30 recording film can improve the archival stability and recording sensitivity, but the initialization and erasing processes will become more difficult. In order to obtain sufficiently high recording sensitivity and archival stability, while maintain adequate initialization and erasing abilities for the rewritable optical memories, the optimal doping concentration of Zn in the Sb70Te30 recording film should locate between 5.3 and 17.9 at. %.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2009-03-25
著者
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Tsai Song-yeu
Materials Research Laboratories Industrial Technology Research Institute
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Her Yung-chiun
Department Of Materials Engineering National Chung Hsing University
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Hsu Yung-sung
Department Of Materials Engineering National Chung Hsing University
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Cheng Shun-Te
Materials Research Laboratory, ITRI, Hsinchiu 31040, Taiwan, R.O.C.
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Liu Ying-Da
Department of Materials Science and Engineering, National Chung Hsing University, Taichung 40227, Taiwan, R.O.C.
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Tsai Song-Yeu
Materials Research Laboratory, ITRI, Hsinchiu 31040, Taiwan, R.O.C.
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