High Resolution Semiconductor Inspection by Using Solid Immersion Lenses

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概要

• 論文の詳細を見る

• A near-field subsurface (100 μm) microscope with numerical aperture $(\mathrm{NA}) = 2.45$ is developed for integrated circuit (IC) inspection by using silicon solid immersion lenses (SIL). It is optimized for imaging patterns underneath the surface (around 100 μm deep). With the illumination light at 1.2 μm, a lateral resolution of better than 300 nm is experimentally demonstrated. Gap control and tilt servos are suggested for the possibility of dynamic imaging.

• Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
• 2009-03-25

著者

• Milster Tom

  College Of Optical Sciences University Of Arizona

• Zhang Jun

  College Of Chemistry And Chemical Engineering Inner Mongolia University

• Valencia Roberto

  IRLabs, Inc., Tucson, AZ 85719, U.S.A.

• Kim Yullin

  IRLabs, Inc., Tucson, AZ 85719, U.S.A.

• Kim Youngsik

  College of Optical Sciences, University of Arizona, Tucson, AZ 85721, U.S.A.

• Dozer Dave

  IRLabs, Inc., Tucson, AZ 85719, U.S.A.

• Kim Youngsik

  College of Optical Sciences, University of Arizona, 1630 East University Boulevard, Tucson, AZ 85721, U.S.A.

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