Measurement of Absorption Coefficient of Carbon-Doped GaAs
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概要
- 論文の詳細を見る
The optical absorption coefficients of carbon-doped GaAs in a wide range of doping concentrations ($10^{18}$ to $10^{20}$ cm-3) were measured by waveguide propagation loss and wafer measurements. Experimental data indicate twofold higher absorption coefficients for C-doped GaAs than for Zn-doped GaAs at a wavelength of 1300 nm.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2009-11-25
著者
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Shimizu Hitoshi
Furukawa Electric Co. Ltd.
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Kawakita Yasumasa
Furukawa Electric Co., Ltd., Photonic Device Research Center, Yokohama 220-0073, Japan
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Kiyota Kazuaki
Furukawa Electric Co., Ltd., Photonic Device Research Center, Yokohama 220-0073, Japan
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Kageyama Takeo
Furukawa Electric Co., Ltd., Photonic Device Research Center, Yokohama 220-0073, Japan
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Shimizu Hitoshi
Furukawa Electric Co., Ltd., Photonic Device Research Center, Yokohama 220-0073, Japan
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